Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

J. Coignus (1) , R. Clerc (1) , Cédric Leroux (2) , G. Reimbold (2) , G. Ghibaudo (1) , F. Boulanger (2)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

This work presents an original approach to model direct tunneling current through high-κ dielectrics including SiO2 interfacial oxide from electron inversion layers. Quantum confinement is taken into account by means of an improved triangular well approximation including physically-based analytical corrections of subband energy levels. An efficient way to compute tunnel transmission probability is also proposed, taking into account the reflections on discontinuous dielectrics interfaces. Finally, this model has been successfully validated by comparison to both numerical simulations and experimental results.

Domains: Micro and nanotechnologies/Microelectronics

J. Coignus, R. Clerc, Cédric Leroux, G. Reimbold, G. Ghibaudo, et al.. Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures. Journal of Vacuum Science and Technology, 2009, 27 (1), pp.338-345. ⟨10.1116/1.3043539⟩. ⟨hal-00596105⟩