Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence

Jelena Sjakste (1) , Nathalie Madeleine Marguerite Vast (1) , Giuliana Barbarino , Matteo Calandra (2) , Francesco Mauri (3) , Junichi Kanasaki , Hiroshi Tanimura , Katsumi Tanimura

1 LSI - Laboratoire des Solides Irradiés - Irradiated Solids Laboratory
2 INSP-E2 - Spectroscopie des nouveaux états quantiques
3 IMPMC - Institut de minéralogie et de physique des milieux condensés

We have recently demonstrated that the fast momentum relaxation due to electron-phonon scattering of hot electrons excited into the conduction band of GaAs leads to the formation of hot-electron ensembles spread over the Brillouin zone. In the present work, we study the energy relaxation of hot-electron ensembles in GaAs, by means of ab initio calculations and time-, energy-, and momentum-resolved spectroscopy. We theoretically show that when the temperature decreases, the energy relaxation time ascribed to electron-phonon interaction becomes faster than at ambient temperature and prove that this is indeed the case in the experimental results.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Jelena Sjakste, Nathalie Madeleine Marguerite Vast, Giuliana Barbarino, Matteo Calandra, Francesco Mauri, et al.. Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (6), pp.64302 - 64302. ⟨10.1103/PhysRevB.97.064302⟩. ⟨hal-01777482⟩