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In-depth Characterization of Resistive Memory-Based Ternary Content Addressable Memories

Abstract : Resistive Memory (RRAM)-based Ternary Content Addressable Memories (TCAMs) were developed to reduce cell area, search energy and standby power consumption beyond what can be achieved by SRAM-based TCAMs. In previous works, RRAM-based TCAMs have already been fabricated, but the impact of RRAM reliability on TCAM performance has never been proven until now. In this work, we fabricated and extensively tested a RRAM-based TCAM circuit. We show that a trade-off exists between search latency and reliability in terms of match/mismatch detection and search/read endurance, and that a RRAM-based TCAM is an ideal building block in multi-core neuromorphic architectures. These ones would not be affected by long latency time and limited write endurance, and could greatly benefit from their high-density and zero standby power consumption.
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https://hal.archives-ouvertes.fr/hal-02939330
Contributor : Denys R. B. Ly <>
Submitted on : Tuesday, September 15, 2020 - 3:05:54 PM
Last modification on : Friday, September 18, 2020 - 3:19:15 AM

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D. R. B. Ly, B. Giraud, J-P Noel, A. Grossi, N. Castellani, et al.. In-depth Characterization of Resistive Memory-Based Ternary Content Addressable Memories. 2018 IEEE International Electron Devices Meeting (IEDM 2018), IEEE, Dec 2018, San Francisco, CA, United States. pp.20.3.1-20.3.4, ⟨10.1109/IEDM.2018.8614603⟩. ⟨hal-02939330⟩

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