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Derniers dépôts
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B. Pinault, Jean-Guy Tartarin, D. Saugnon, R. Leblanc. Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA. Microelectronics Reliability, 2023, Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023, 150, pp.115126. ⟨10.1016/j.microrel.2023.115126⟩. ⟨hal-04493506⟩
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Jean-Guy Tartarin, Bastien Pinault, Damien Saugnon. Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs. IEEE International Conference on Noise and Fluctuations, Chistoforos Theodorou, Oct 2023, Grenoble, France. ⟨hal-04440655⟩
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L. Ghizzo, G. Guibaud, C. de Nardi, F. Jamin, V. Chazal, et al.. Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes. 49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩. ⟨hal-04307540⟩