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Organic doped diode rectifier based on parylene-electronic beam lithography process for radio frequency applications

Khaoula Ferchichi 1 Sebastien Pecqueur 1, 2 David Guerin 1, 3 Ramzi Bourguiga 4 Kamal Lmimouni 1, 2
2 NCM - IEMN - Nanostructures, nanoComponents & Molecules - IEMN
IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 : umr 8520
3 CMNF - IEMN - Centrale de Micro Nano Fabrication - IEMN
IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Abstract : We have adapted a "peel-off" process to structure stacked organic semiconductors (conducting polymers or small molecules) and metal layers for diode microfabrication. The fabricated devices are organic diode rectifier in a coplanar waveguide structure. Unlike conventional lithographic process, this technique does not lead to destroy organic active layers with an input oscillating voltage of 2 V peak-to-peak, promising for RFID device applications or for GSM band energy harvesting in low-cost IoT objects.
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https://hal.archives-ouvertes.fr/hal-03279691
Contributor : Khaoula Ferchichi <>
Submitted on : Tuesday, July 6, 2021 - 4:18:53 PM
Last modification on : Friday, September 17, 2021 - 2:12:54 PM

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Khaoula Ferchichi, Sebastien Pecqueur, David Guerin, Ramzi Bourguiga, Kamal Lmimouni. Organic doped diode rectifier based on parylene-electronic beam lithography process for radio frequency applications. Organic Electronics, Elsevier, 2021, 97, pp.106266. ⟨10.1016/j.orgel.2021.106266⟩. ⟨hal-03279691⟩

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