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Above 70% PAE in Q-band with AlN/GaN HEMTs structures

Abstract : In this paper, we report on a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performances and robustness for the thinner barrier layer, which is attributed to the reduced mechanical strain into the heterostructure. The impact of the gateto-drain distance (LGD) on the RF performances has been studied at 40 GHz. Pulsed mode large signal characteristics reveal an outstanding combination of power added efficiency (PAE) of 72% with a saturated output power density (POUT) > 3.5 W/mm at VDS = 20V with LGD=0.5 µm. Furthermore, short term RF reliability assessment demonstrates a promising robustness.
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https://hal.archives-ouvertes.fr/hal-03279173
Contributor : Farid Medjdoub <>
Submitted on : Tuesday, July 6, 2021 - 12:16:45 PM
Last modification on : Thursday, September 9, 2021 - 4:08:23 PM

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  • HAL Id : hal-03279173, version 1

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Kathia Harrouche, Riad Kabouche, Etienne Okada, Farid Medjdoub. Above 70% PAE in Q-band with AlN/GaN HEMTs structures. WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩

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