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AlGaN/GaN HEMTs on AlN substrate for power electronics

Abstract : GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN HEMTs using thick and thin GaN channels in comparison with GaN-on-Si HEMTs using a similar thin epi-design.
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Contributor : Farid Medjdoub <>
Submitted on : Tuesday, July 6, 2021 - 12:08:12 PM
Last modification on : Thursday, July 8, 2021 - 9:06:02 AM


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  • HAL Id : hal-03279160, version 1


Jash Mehta, Idriss Abid, Thi Huong Ngo, Yvon Cordier, Farid Medjdoub. AlGaN/GaN HEMTs on AlN substrate for power electronics. WOCSDICE, Jun 2021, Bristol (virtual), United Kingdom. ⟨hal-03279160⟩



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