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Article Dans Une Revue Solar Energy Materials and Solar Cells Année : 2023

Dual bandgap operation of a GaAs/Si photoelectrode

Gabriel Loget
Bruno Fabre

Résumé

The development of high-efficiency photoelectrodes at low manufacturing cost is of great interest for the production of renewable and green hydrogen through solar-driven water splitting. In this work, we use structural, optical, and photoelectrochemical characterizations to study the performance of unprotected epitaxial GaAs/Si photoelectrodes during photocorrosion. More specifically, we demonstrate that photoanodes including 1-µm thick GaAs epitaxially grown thin film on a low-cost Si substrate can produce a higher photocurrent than those measured for expensive commercial GaAs wafers. Based on photoelectrochemical experiments under monochromatic excitation, we show that the improved photocurrent has to be related to the dual-bandgap operation of the GaAs/Si photoelectrode, benefiting from both GaAs and Si photo-generated carriers. This result opens new possibilities to further design efficient and low-cost dual-bandgap photoelectrodes.
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Dates et versions

hal-03966710 , version 1 (31-01-2023)

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Paternité - Pas d'utilisation commerciale - Pas de modification

Identifiants

Citer

Mekan Piriyev, Gabriel Loget, Yoan Léger, Lipin Chen, Antoine Létoublon, et al.. Dual bandgap operation of a GaAs/Si photoelectrode. Solar Energy Materials and Solar Cells, 2023, 251, pp.112138. ⟨10.1016/j.solmat.2022.112138⟩. ⟨hal-03966710⟩
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